Self-organized quantum dots for optoelectronics

Magnetoluminescence of Annealed Self-Organized InGaAs/GaAs Quantum Dots

We have investigated the effects of annealing a self-assembled InGaAs/GaAs quantum dot sample between 580 and 700 C by magnetoluminescence measurements at 2 K and fields up to 15 T. By using a high power density of about 5 kW/cm2 for the excitation of the luminescence we were able to observe up to three features in addition to the ground-state emission arising from radiative recombination proce...

Time-Resolved Electronic Relaxation Processes In Self-Organized Quantum Dots

Strain-induced quantum dots by self-organized stressors

All material supplied via Aaltodoc is protected by copyright and other intellectual property rights, and duplication or sale of all or part of any of the repository collections is not permitted, except that material may be duplicated by you for your research use or educational purposes in electronic or print form. You must obtain permission for any other use. Electronic or print copies may not ...

Nanocrystal Optoelectronics: from Solution-Processed Quantum Dots to Wells

Nano-optoelectronics Based on Iii-v Semiconductor Quantum Dots

In this talk, I discuss the new physics and device applications provided by self-assembled quantum dots, in particular, with III-V compound semiconductor materials system. The quantum dots are the structures three-dimensionally confined and therefore provide quasi zero-dimensional electron gas system, where novel physics can be studied and improved device performance can be achieved, in particu...